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 SD303C..C Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 350 A
FEATURES
* High power FAST recovery diode series * 1.0 to 2.0 s recovery time * High voltage ratings up to 2500 V * High current capability * Optimized turn-on and turn-off characteristics
DO-200AA
RoHS
COMPLIANT
* Low forward recovery * Fast and soft reverse recovery * Press PUK encapsulation * Case style conform to JEDEC DO-200AA * Maximum junction temperature 125 C
PRODUCT SUMMARY
IF(AV) 350 A
* Lead (Pb)-free
TYPICAL APPLICATIONS
* Snubber diode for GTO * High voltage freewheeling diode * Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER IF(AV) TEST CONDITIONS VALUES 350 Ths 55 550 IF(RMS) Ths 50 Hz IFSM 60 Hz 50 Hz 60 Hz VRRM trr TJ Range 25 5770 A 6040 166 152 400 to 2500 1.0 to 2.0 TJ 25 C - 40 to 125 V s kA2s UNITS A C A C
I2 t
Document Number: 93174 Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
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SD303C..C Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 04 SD303C..S10C 08 10 12 SD303C..S15C 14 16 SD303C..S20C 20 25 VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 1000 1200 1400 1600 2000 2500 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 900 1100 1300 1500 1700 2100 2600 35 IRRM MAXIMUM AT TJ = 125 C mA
Fast Recovery Diodes (Hockey PUK Version), 350 A
FORWARD CONDUCTION
PARAMETER Maximum average forward current at heatsink temperature Maximum RMS current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180 conduction, half sine wave Double side (single side) cooled 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle , non-repetitive forward current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 350 (175) 55 (75) 550 5770 6040 4850 Sinusoidal half wave, initial TJ = TJ maximum 5080 166 152 117 107 1660 1.14 1.63 1.14 0.77 2.26 kA2s V kA2s A UNITS A C
t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum (I > x IF(AV)), TJ = TJ maximum (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum (I > x IF(AV)), TJ = TJ maximum Ipk = 1100 A, TJ = 25 C; tp = 10 ms sinusoidal wave
Low level value of threshold voltage High level value of threshold voltage Low level of forward slope resistance High level of forward slope resistance Maximum forward voltage drop
m V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE AT TJ = 25 C CODE trr AT 25 % IRRM (s) 1.0 1.5 2.0 750 25 - 30 TEST CONDITIONS Ipk SQUARE PULSE (A) TYPICAL VALUES AT TJ = 125 C Vr (V) trr AT 25 % IRRM (s) 2.4 2.9 3.2 Qrr (C) 52 90 107 Irr (A) 33 44 46
IFM
dI/dt (A/s)
trr t Qrr IRM(REC)
S10 S15 S20
dir dt
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Document Number: 93174 Revision: 04-Aug-08
SD303C..C Series
Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 350 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg DC operation single side cooled RthJ-hs DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 C - 40 to 150 0.16 K/W 0.08 4900 (500) 70 DO-200AA N (kg) g UNITS
RthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION CONDUCTION ANGLE SINGLE SIDE 180 120 90 60 30 0.010 0.012 0.016 0.024 0.042 DOUBLE SIDE 0.011 0.013 0.016 0.024 0.042 SINGLE SIDE 0.008 0.013 0.018 0.025 0.042 DOUBLE SIDE 0.008 0.013 0.018 0.025 0.042 TJ = TJ maximum K/W RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 93174 Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
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SD303C..C Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 350 A
130 Maximum Allow able Heatsink Temperature (C) 120 110 100 90 80 70 60 50 40 0 100 200 300 400 500 600 Average Forwa rd Curren t (A) 30 60 90 120 180 DC
C o ndu c tio n Pe rio d
130 Maxim um Allow able Heatsink Tem perature (C) 120 110 100 90 80 70 60 0 20 40 60
SD303C..C Series (Sin gle Side Cooled) R th J-hs (DC) = 0.16 K/W
SD303C..C Series (D ouble Side Cooled) R th J- hs (DC) = 0.08 K/W
C o nduc tio n A ng le
180 30 60 90 120 80 100 120 140 160 180
Averag e Forw ard Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1 30 M a x im um A llo w a b le H ea t sin k T e m p e ra t u re ( C ) M a x im u m A v e ra g e F o rw a rd P o w e r Lo ss (W ) 1 20 1 10 1 00 90 80 70 60 50 0 50 10 0 150 2 00 250 3 00 A v e ra g e F o r w a rd C u rre n t (A ) 30 60 90 120 180 DC
C o ndu c tio n P e rio d
8 00 S D 3 0 3 C ..C S e rie s (S in g le Sid e C o o le d ) R thJ-hs (D C ) = 0 .1 6 K /W 7 00 6 00 5 00 4 00 3 00
C o nduc tio n An g le
1 8 0 1 2 0 90 60 30
R M S Lim it
2 00 1 00 0 0 50 1 0 0 1 5 0 20 0 25 0 30 0 3 5 0 4 00 A v e ra g e F o rw a rd C u rre n t (A ) SD 3 0 3 C ..C Se rie s TJ = 1 2 5C
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
M a xim u m A v e r a ge Fo rw a rd Po w e r Lo ss (W )
130 Maxim um Allow able Heatsink Tem perature (C) 120 110 100 90 80 70 60 50 40 0 50
1 00 0 SD303C..C Series (D ouble Side Cooled) R thJ-h s (DC) = 0.08 K/W 9 00 8 00 7 00 6 00 DC 1 8 0 1 2 0 90 60 30
C o nduc tio n A ng le
5 0 0 R M S Lim it 4 00 3 00 2 00 1 00 0 0 100 2 00 3 00 400 5 00 6 00 A v e ra g e Fo rw a rd C u r re n t (A ) SD 3 0 3 C ..C Se rie s T J = 1 2 5C
C o ndu ct io n Pe rio d
30
60
90 120 180
100 150 200 250 300 350 400
Average Forward Curren t (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
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Document Number: 93174 Revision: 04-Aug-08
SD303C..C Series
Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 350 A
55 0 0 P e a k H a lf S in e W a v e Fo rw a rd C u rr e n t (A ) 50 0 0 45 0 0 40 0 0 35 0 0 30 0 0 25 0 0 20 0 0 1 10 1 00
N um be r O f E qua l Am p litude Ha lf C yc le C urrent Pulses (N )
In st a n t a n e o u s Fo rw a rd C urre n t (A )
A t A n y Ra t e d Lo a d C o n d it io n A n d W ith R a t e d V RRM A p p lie d F o llo w in g Su rg e . In itia l TJ = 1 2 5C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s
10000 SD 3 0 3 C ..C Se r ie s
1 000
100
TJ = 2 5 C TJ = 1 2 5 C
SD 3 0 3 C ..C Se r ie s
10 0 1 2 3 4 5 6 7 8 In sta n t a n e o us Fo rw a rd V o lta g e (V )
Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
6000 P e a k H a lf Sine W a v e Fo rw a rd C urr e n t (A ) 5500 5000 4500 4000 3500 3000 2500 2000
M a x im u m N o n R e p e t itiv e S u rg e C u rre n t V e r su s P u lse T ra in D u ra t io n . In itia l TJ = 1 2 5 C N o V o lt a g e R e a p p lie d R a t e d V RR M e a p p lie d R
1 (K / W ) St e a d y S ta t e V a lu e R thJ-hs = 0 .1 6 K / W ( Sin g le Sid e C o o le d) 0 .1 R thJ-h s = 0 .0 8 K / W ( D o u b le S id e C o o le d ) ( D C O p e ra tio n )
T ra n sie n t T h e rm a l I m p e d a n c e Z
thJ-hs
0 .0 1
SD 3 0 3 C ..C Se rie s 0 .0 0 1 0 .0 0 0 1 0 .0 0 1
S D 3 0 3 C ..C Se rie s 0.1 P u lse T ra in D u ra t io n (s) 1
1500 0.01
0 .0 1
0 .1
1
10
10 0
Sq u a re W a v e Pu lse D ur at io n ( s)
Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
1 20
V
1 00 F o rw a rd R e c o v e ry ( V ) 80
FP
I
T = 1 2 5C
J
60
TJ = 2 5C
40 20
S D 3 0 3 C ..S2 0 C Se rie s
0 0 20 0 40 0 600 8 00 10 0 0 12 00 1 40 0 1 60 0 18 0 0 200 0
R at e O f f F a ll O f F o rw a rd C u rre n t d i/ d t ( A / u se c )
Fig. 11 - Typical Forward Recovery Characteristics
Document Number: 93174 Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
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SD303C..C Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 350 A
3 .6 M a x im u m R e v e rse R e c o v e ry T im e - T rr ( s) SD 3 0 3 C ..S1 0 C Se rie s TJ = 1 2 5 C , V r = 3 0 V
I FM = 750 A Squ are Pu lse
2 .8 M a xim um R e ve rse R e c o v e ry T im e - Trr ( s) 2 .6 2 .4 2 .2
SD 3 0 3 C ..S 1 5 C S e rie s TJ = 1 2 5 C , V r = 3 0 V 3 .2
I FM = 75 0 A
2 .8
Sq ua re Pulse
2 .4
4 00 A
2 1 .8
4 00 A
2
20 0 A
200 A
1 .6 10 100
1 .6 10 100
R ate O f Fall O f Fo rwa rd C urre nt - di/dt (A /s)
R ate O f Fa ll O f Fo rw ard C urre nt - di/dt (A /s)
Fig. 12 - Recovery Time Characteristics
Fig. 15 - Recovery Time Characteristics
14 0
M a x im um Re v e rse R e c o v e ry C h a rg e - Q rr ( C )
170 M a xim u m R e v e rse R e co v e ry C h a rg e - Q r r ( C )
I FM = 750 A Squ are Pulse
13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 20 10 0 20 40
160 150 140 130 120 110 100 90 80 70 60 50
I FM = 75 0 A Squa re Pulse
40 0 A
4 00 A
20 0 A
20 0 A
S D 3 0 3 C ..S 1 0 C Se rie s TJ = 1 2 5 C , V r = 3 0 V 60 80 100
SD 3 0 3C ..S 1 5 C S e rie s TJ = 1 2 5 C , V r = 3 0 V 10 20 30 4 0 50 60 70 80 9 0 100
Ra te O f Fall O f Fo rw ard Cu rrent - d i/dt (A /s)
Rate O f Fa ll O f Fo rw ard Current - di/dt (A /s)
Fig. 13 - Recovery Charge Characteristics
Fig. 16 - Recovery Charge Characteristics
1 00 M a xim u m R e v e rse R e c o v e ry C u rre n t - Irr ( A ) M a xim u m R e v e rse R e c o v e ry C u rre n t - Irr (A )
I FM = 75 0 A
1 30
Square Pulse 4 00 A
90 80 70 60 50 40 30 20
1 20 1 10 1 00 90 80 70 60 50 40 30 20 10
I FM = 7 50 A Sq uare Pu lse
20 0 A
4 00 A
20 0 A
SD 3 0 3 C ..S1 0 C Se rie s TJ = 1 2 5 C , V r = 3 0 V 20 30 40 5 0 60 70 80 90 10 0
SD 3 0 3 C ..S1 5 C Se rie s TJ = 1 2 5 C , V r = 3 0 V
1 0 20 30 40 50 60 70 80 90 1 00
Rate O f Fall O f Fo rwa rd Curre n t - di/d t (A/s)
R ate O f Fall O f Fo rw ard Cu rre nt - di/d t (A/s)
Fig. 14 - Recovery Current Characteristics
Fig. 17 - Recovery Current Characteristics
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Document Number: 93174 Revision: 04-Aug-08
SD303C..C Series
Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 350 A
3.6 3 00 SD30 3C..S20C Series TJ = 125 C, V r = 30V
Maxim um Rever se Recov ery Tim e - Trr (s)
M a xim u m R e v e rse R e c o v e ry C h a rg e - Q rr ( C )
I FM = 7 50 A
3.4 3.2
2 50
Sq ua re Pulse
I FM = 75 0 A Sq uare Pulse
2 00
4 00 A
3 2.8 2.6 2.4 10
4 00 A 20 0 A
1 50
20 0 A
1 00
SD 3 0 3 C ..S2 0 C Se rie s TJ = 1 2 5 C , V r = 3 0 V
50 10 20 30 4 0 50 60 70 80 90 100
10 0
Rate O f Fall O f Fo rwa rd Curre nt - di/dt (A /s)
Rate O f Fall O f Fo rw ard Current - di/dt (A /s)
Fig. 18 - Recovery Time Characteristics
Fig. 19 - Recovery Charge Characteristics
130
M a x im um R e v e rse R e c o v e ry C u rre n t - Irr (A )
120 110 100 90 80 70 60 50 40 30 20
I FM = 7 50 A Sq uare Pu lse 4 00 A
2 00 A
SD 3 0 3 C ..S 2 0 C S e rie s TJ = 1 2 5 C , V r = 3 0 V
10 20 3 0 40 50 60 70 80 90 10 0
Rate O f Fall O f Forw ard Current - di/d t ( A/s)
Fig. 20 - Recovery Current Characteristics
1 E4
4 10 2 0 jo ule s pe r pulse 4 10 20 jo u le s p er pulse 2
P e a k F o rw a rd C u rre n t (A )
1
2 1 0 .2 0.1 0.4
1 E3
0 .1 0. 04 0 .02
0 .4 0 .2
1 E2
0.0 1
SD 3 0 3C ..S10 C S e ri es Sin uso ida l Pul se TJ = 1 25C , V RRM = 1 1 2 0 V d v /d t = 1 0 0 0V / s SD 30 3 C ..S1 0 C Se rie s Tr ape zo id al Pul se TJ = 1 2 5C , V RRM = 1 1 2 0V d v / dt = 1 0 00 V/ s ; di/ dt=5 0 A/ s
tp
tp
1 E1 1 E1
1E 2
1 E3
1 E4
1E1
1 E2
1E3
1E4
P u lse B a se w id t h ( s)
P ulse Ba se w id t h ( s)
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
Document Number: 93174 Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
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SD303C..C Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 350 A
1E4
20 jo ules pe r p ulse 10
20 jo ule s per p ulse 2 1 0 .4 0.2 4 10
P e a k F o rw a rd C u rr e n t (A )
2 1
4
1E3
0 .4 0 .2 0 .1 0 .04 0.0 2
1E2
SD 3 0 3 C..S15 C Se ri es Sinu so idal P ulse TJ = 1 2 5C, V RRM = 1 7 6 0 V dv / dt = 10 0 0 V/ s SD 3 0 3 C..S1 5 C Se rie s T rape zo idal Pu lse T J = 1 2 5C , V R RM = 1 7 6 0V d v/ dt = 1 0 0 0 V/ s ; di / dt= 5 0 A/ s
tp
tp
1E1 1E 1
1E2
1E 3
1 E4
1E1
1 E2
1 E3
1 E4
Pu lse B a se w id t h ( s)
P u lse B a se w id th ( s)
Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
10 4 20 jo u le s per pu lse
20 jo ule s per p ulse 10 4 2 1 0 .4
Pe a k F o rw a rd C ur re nt ( A )
2
1E3
0. 4 0.2 0.1
1
1E2
0. 04
0 .2
SD 3 0 3 C..S2 0 C Se rie s T rape zo ida l Pul se TJ = 1 2 5C , V R R M = 1 7 6 0 V dv / dt = 1 0 0 0 V/ s ; di / dt= 5 0 A/ s
tp
S D3 0 3 C..S2 0 C Se rie s Sin uso ida l Pu lse TJ = 1 2 5C, V RRM= 1 7 60 V dv / dt = 1 0 0 0 V/ s
tp
1E1 1E1
1E2
1 E3
1 E4
1E1
1 E2
1E 3
1 E4
Pu lse B a se w id t h ( s)
P u lse B a se w id th ( s)
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93174 Revision: 04-Aug-08
SD303C..C Series
Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 350 A
ORDERING INFORMATION TABLE
Device code
SD
1
1 2 3 4 5 6 7
30
2 Diode
3
3
C
4
25
5
S20
6
C
7
Essential part number 3 = Fast recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) trr code (see Recovery Characteristics table) C = PUK case DO-200AA
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95248
Document Number: 93174 Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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